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| FS04...D SURFACE MOUNT SCR DPAK (Plastic) On-State Current 4 Amp Gate Trigger Current < 200 A Off-State Voltage A 200 V / 600 V K A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-State Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180 Conduction Angle, TC = 115 C Half Cycle, =180, TC = 115 C Half Cycle, 60 Hz Half Cycle, 50 Hz t = 10 ms, Half Cycle IGR = 10A 20 s max. 20 s max. 20 ms max. Min. 4 2.5 33 30 4.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A 2s V A W W C C C IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld -40 -40 10s max SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 K B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Jun - 02 FS04...D SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 220, Tj = 125 C MAX VR = VRRM , Tj = 25 C MAX MAX at IT = 8 Amp, tp = 380 s, Tj = 25 C VD = 12 VDC , RL = 33, Tj = 25 C MAX VD =VDRM, RL = 3.3 K, RGK = 220 MIN Tj = 125 C MAX IT = 50 mA , RGK = 1K, Tj = 25 C IG = 1 mA , RGK = 1K, Tj = 25 C MAX VD = 0.67 x VDRM , RGK = 220, MIN Tj = 125 C VD = 12 VDC , RL = 33. Tj = 25 C MIN 01 1 20 SENSITIVITY 04 15 50 02 200 1 5 1.6 0.8 0.1 5 6 10 10 50 5 10 03 20 200 Unit A mA A V V V mA mA V/s A/s C/W C/W IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Critical Rate of Current Rise IG = 2 x IGT Tr 100 ns, F = 60 Hz, Tj = 125 C Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S=0.5 cm2) 3 70 PART NUMBER INFORMATION F FAGOR SCR CURRENT S 04 01 B D 00 TR PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jun - 02 FS04...D SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current P (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 IT(AV)(A) = 80 360 Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink+contact. P (W) 4.0 3.5 Rth= 37C/W Rth= 15C/W Rth= 5C/W Rth= 10C/W T case (C) Rth= 0C/W 115 3.0 2.5 2.0 120 1.5 1.0 0.5 0 0 25 50 75 100 125 Tamb (C) 125 =180 Fig. 3: Average and DC on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) I T(AV) (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Tamb (C) = 180 DC Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. K=[Zth(j-c) / Rth(j-c)] 1.0 0.5 0.2 0.1 1E-3 1E-2 1E-1 1E+0 tp (s) Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recommended pad layout) K=[Zth(j-a) / Rth(j-a)] 1.00 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 C) 2.0 1.8 1.6 1.4 1.2 Igt Ih (Tj) Ih (Tj = 25 C) 0.10 1.0 0.8 0.6 0.4 0.2 Ih 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 tp (s) 0 -40 -20 0 20 40 60 80 100 120 140 Tj (C) Jun- 02 FS04...D SURFACE MOUNT SCR Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 35 Tj initial = 25 C F= 50Hz Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp <10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100 Tj initial = 25 C 30 25 20 10 15 10 5 0 1 10 100 1000 Number of cycles 1 1 2 5 10 tp(ms) I2 t ITSM Fig. 8: On-state characteristics (maximum values). ITM(A) 50.0 Tj max Vto = 0.85 V Rd =90m Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). I th(j-a) (C/W) 100 80 10.0 Tj=Tj max 60 40 1.0 Tj25 C 20 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 VTM(V) 0 S(cm) 0 2 4 6 8 10 12 14 16 18 20 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T(C) 250 245C 215C 200 Epoxy FR4 board 150 100 Metal-backed board 50 0 0 40 80 120 160 200 240 280 320 360 t(s) Jun - 02 FS04...D SURFACE MOUNT SCR PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 82 A o1x0.15 E L3 82 D H 1.6 L4 82 L e 4.57 Typ. b L2 A1 1.0670.013 82 82 D1 c2 E1 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.30.18 0.12 0.750.1 0.80.013 6.10.1 6.580.14 5.360.1 2.28BSC 9.900.15 2.60.05 0.50.013 1.200.05 0.830.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g FOOT PRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 Jun - 02 |
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